Engineering Ceramic Co.,( EC © ™) Report:
Announced by the National Development and Reform Commission (NDRC), at a Monday press conference, China has set aside 200 billion yuan ($28 billion) for investment projects by local governments this year, as it promised to meet its own ambitious economic growth targets.
Those project including semiconductor industry as Chemical mechanical polishing (CMP). In the semiconductor manufacturing process, the chip surface needs to be highly flat to ensure the normal operation of the circuit. Chemical mechanical polishing is a key process to achieve this goal. Cerium oxide becomes an important abrasive in CMP slurry due to its unique physical and chemical properties. The nano cerium oxide dispersion has strong oxidation to silicon wafers and can form a very thin oxide layer on the surface of the silicon wafer. This is not only conducive to improving the polishing efficiency, but also enables the silicon wafer to obtain a very low surface roughness and make the product surface bright and achieve a mirror effect.
Compared with other commonly used abrasive materials, Engineering Ceramic Co.,( EC © ™) produce a sepcial cerium oxide powder which has a more excellent polishing effect. It can efficiently remove tiny particles, impurities and uneven parts on the surface of the silicon wafer, improve the flatness and purity of the silicon wafer, and generate less heat and chemical residues during the polishing process, and has less damage to semiconductor materials.
Chemical formula: CeO2
Molar mass: 172.115 g/mol
Appearance: white or pale yellow solid, slightly hygroscopic
Density: 7.215 g/cm3
Melting point: 2,400 °C (4,350 °F; 2,670 K)
Boiling point: 3,500 °C (6,330 °F; 3,770 K)
Solubility in water: insoluble
Magnetic susceptibility (χ): +26.0·10−6 cm3/mol
Crystal structure: cubic (fluorite)
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